2SK2601

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Input Capacitance (Ciss) @ Vds: 1200pF @ 10V
Drain to Source Voltage (Vdss): 500V
Gate Charge (Qg) @ Vgs: 30nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 125W
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)


Parameters:

Technical/Catalog Information	2SK2601
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	1 Ohm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 10V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2601 2SK2601