2SK2613

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Gate Charge (Qg) @ Vgs: 65nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 150W
Drain to Source Voltage (Vdss): 1000V (1kV)
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 2000pF @ 25V
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 4A, 10V


Features:

· Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.)
· High forward transfer admittance: |Y_fs| = 6.0 S (typ.)
· Low leakage current: I_DSS = 100 µA (max) (V_DS = 800 V)
· Enhancement-model: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)


Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		VDSS	1000	V
Drain-gate voltage (RGS =20 k)		VDGR	1000	V
Gate-source voltage		VGSS	-30	V
Drain current	DC (Note 1)	ID	8	A
	Pulse (Note 1)	IDP	24
Drain power dissipation (Tc = 25°C)		PD	150	W
Single pulse avalanche energy (Note 2)		EAS	910	mJ
Avalanche current		IAR	8	A
Repetitive avalanche energy (Note 3)		EAR	15	mJ
Channel temperature		Tch	150	°C
Storage temperature range		Tstg	-55~150	°C

Parameters:

Technical/Catalog Information	2SK2613
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	1.7 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	65nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK2613 2SK2613