2SK2613(F), US $ 1.46-2.78 , Toshiba, 2SK2613(F) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00154643 Detail

2SK2613(F): MOSFET MOSFET N-Ch 1000V 8A Rdson 1.7 Ohm

2SK2613(F) Data Sheet

US $ 1.46~2.78 / Piece | Get Latest Price

Part Number:: 2SK2613(F)
Mfg:: Toshiba
Supply Ability:: 5000

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$2.78
$2.22
$1.55
$1.46

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Upload time: 2025/12/27

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	8 A
Resistance Drain-Source RDS (on) :	1.7 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-3P
Packaging :	Bulk

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Continuous Drain Current : 8 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 1.7 Ohms

Parameters:

Technical/Catalog Information	2SK2613(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	1.7 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	65nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2613 F 2SK2613F

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2SK2613(F)

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