MOSFET N-CH 800V 2.5A TO-220FI
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
| Series: | - | Manufacturer: | SANYO Semiconductor (U.S.A) Corporation | ||
| FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
| Current - Collector (Ic) (Max): | - | FET Feature: | Standard | ||
| Continuous Drain Current : | 2.1 A | Drain to Source Voltage (Vdss): | 800V | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 2.5A | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | 4.8 Ohm @ 1.3A, 15V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | - | Gate Charge (Qg) @ Vgs: | 15nC @ 10V | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 550pF @ 20V | ||
| Power - Max: | 2W | Mounting Type: | Through Hole | ||
| Package / Case: | TO-220-3 Full Pack | Supplier Device Package: | TO-220FI(LS) |

| Absolute maximum ratings | |
|---|---|
| VDSS [V] | 800 |
| VGSS [V] | 30 |
| ID [A] | 2.5 |
| PD [W] | 25 Tc=25°C |
| Electrical characteristics | |
|---|---|
| RDS(on) typ [Ω] VGS=10V ID [A]=1.3 | 3.6 *15V |
| VGS(off) min [V] | 3.5 |
| VGS(off) max [V] | 5.5 |
| |yfs| typ [S] | 1.4 |
| Ciss typ [pF] | 550 |
| Qg typ [nC] | 15 |