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2SK2698(F,T): MOSFET N-Ch 500V 15A Rdson 0.4 Ohm

2SK2698(F,T) Data Sheet

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Part Number:: 2SK2698(F,T)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/4/27

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	30 V	Continuous Drain Current :	15 A
Resistance Drain-Source RDS (on) :	0.4 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-3 PN
Packaging :	Reel

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 30 V
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.4 Ohms
Package / Case : TO-3 PN

Parameters:

Technical/Catalog Information	2SK2698(F,T)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	400 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	2600pF @ 10V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2698 F,T 2SK2698F,T 2SK2698FT ND 2SK2698FTND 2SK2698FT

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2SK2698(F,T)

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