2SK2723

Drain to Source Voltage V_DSS ..........................60 V
Gate to Source Voltage V_GSS  .........................±20 V
Drain Current (DC) I _{D (DC)}  ..........................±25 A
Drain Current (pulse)* I _{D (pulse)}   ......................±100 A
Total Power Dissipation (TA = 25 °C) P_T   ...................2.0 W
Total Power Dissipation (Tc = 25 °C) P_T  ....................25 W
Channel Temperature T_ch   ..........................150 °C
Storage Temperature T_stg ......................-55 to +150 °C

* PW 10 s, Duty Cycle 1 %
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage may be applied to this device.