2SK2724

Drain to Source Voltage V_DSS ............................60 V
Gate to Source Voltage V_GSS  ...........................±20 V
Drain Current (DC) I _D(DC)   ............................±35 A
Drain Current (Pulse)* I _D(pulse) .........................±140 A
Total Power Dissipation (T_A = 25 °C) P_T   .....................2.0 W
Total Power Dissipation (T_C = 25 °C) P_T ......................30 W
Channel Temperature T_ch  ............................150 °C
Storage Temperature T_stg  .......................55 to +150 °C
* PW 10 s, Duty Cycle 1 %
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional  otection circuit is externally required if voltage exceeding the rated voltage may be applied to this device.