2SK2779

      The 2SK2779 is designed as N-channel silicon MOSFET.
      Some absolute maximum ratings at Ta = 25°C have been concluded into several points as follow.The first one is about its drain to source voltage which would be 100 V.The second one is about its gate to source voltage which would be ±20 V.The third one is about its drain current (DC) which would be ±20 A.The fourth one is about its drain current (pulse) which would be ±80 A with condition of PW<=10ms, duty cycle <= 1%.The fifth one is about its maximum power dissipation which would be 35 W.The sixth one is about its single avalanche energy which would be 200 mJ.The seventh one is about its single avalanche current which would be 20 A.The eighth one is about its channel temperature which would be 150°C.The last one is about its storage temperature which would be 55 to +150°C.
      Also there are some important electrical characteristics at Ta = 25°C about it.The first one is about its drain to source breakdown voltage which would be min 100V with condition of Id=0.1mA, Vgs=0.The second one is about its gate to source leakage current which would be max ±100 A with condition of Vgs=±20V, Vds=0.The third one is about its zero gate voltage drain current which would be max 100 A with condition of Vds= 100V, Vgs= 0V.The fourth one is about its gate threshold voltage which would be min 1.0V and max 2.0V with condition of Vds= 10V, Id= 250A.The fifth one is about its common source forward transconductance which would be min 12S and typ 20S with condition of Vds= 10V, Id= 10A.The sixth one is about its static drain source on state resistance which would be typ 60 and max 80 m with condition of Vgs= 10V, Id= 10A and would be typ 75 and max 95 m with condition of Vgs= 4V, Id= 10A.The seventh one is about its input capacitance which would be typ 1630 pF with condition of Vds=10V, f=1MHz and Vgs=0V.The eighth one is about its output capacitance which would be typ 480 pF with condition of Vds=10V, f=1MHz and Vgs=0V.And so on.For more information please contact us.