2SK2789

      The 2SK2789 is designed as silicon N-channel MOS type (L2--MOSV) with typical applications of chopper regulator, DC-DC converter and motor drive applications.
      It has five features.The first one is that it would have 4 V gate drive.The second one is that it would have low drain-source ON-resistance which means Rds (ON) = 66 m (typ.).The third one is that it would have high forward transfer admittance which means |Yfs| = 16 S (typ.).The fourth one is that it would have low leakage current which means Idss = 100 A (max) (VDS = 100 V).The fifth one is that it would have enhancement mode which means Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA).That are all the features.
      Some absolute maximum ratings (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 100 V.The second one is about its drain-gate voltage (RGS = 20 k) which would be 100 V.The third one is about its gate-source voltage which would be ±20 V.The fourth one is about its drain current which would be 27 A for DC and would be 108 A for pulse.The fifth one is about its drain power dissipation (Tc = 25°C) which would be 60 W.The sixth one is about its single pulse avalanche energy which would be 193 mJ.The seventh one is about its avalanche current which would be 27 A.The eighth one is about its repetitive avalanche energy which would be 6 mJ.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.
      Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.And also about its drain current it should be noted that ensure that the channel temperature does not exceed 150°C.And about its single-pulse avalanche energy it should be noted that Vdd = 90 V,Tch = 25°C(initail), L = 428 H, Rg = 25 , Iar = 27 A.About its repetitive avalanche energy it should be noted that repetitive rating: pulse width limited by maximum channel temperature.After all this transistor is an electrostatic-sensitive device.Please handle with caution.