2SK2800

      The 2SK2800 is designed as silicon N channel MOSFET with typical applications of high speed power switching applications.
      It has four features.The first one is that it would have low on-resistance which means Rds(on)= 15 m typ.The second one is that it would have high speed switching.The third one is that it would have low drive current.The fourth one is that its 4 V gate drive device can be driven from 5 V source.That are all features.
      Some absolute maximum ratings (Ta = 25°C) have been concluded into several points as follow.The first one is about its drain to source voltage which would be 60 V.The second one is about its gate to source voltage which would be ±20 V.The third one is about its drain current which would be 40 A.The fourth one is about its drain peak current which would be 160 A with condition of PW <= 10s, duty cycle <= 1 %.The fifth one is about its body-drain diode reverse drain current which would be 40 A.The sixth one is about its avalanche current which would be 40 A.The seventh one is about its avalanche energy which would be 137 mJ.The seventh one is about its channel dissipation which would be 50 W.The eighth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature which would be from 55 to +150 °C.
      Also there are some important electrical characteristics at Ta = 25°C about it.The first one is about its drain to source breakdown voltage which would be min 60V with condition of Id=10mA, Vgs=0.The second one is about its gate to source breakdown voltage which would be min ±20 V with condition of Ig= ±100 A, Vds= 0.The third one is about its gate to source leak current which would be max ±10 A with condition of Vgs= ±16 V, Vds= 0.The fourth one is about its zero gate voltage drain current which would be max 10 A with condition of Vds= 60 V, Vgs= 0.The fifth one is about its gate to source cutoff voltage which would be min 1.5 and max 2.5 V with condition of Id= 1 mA, Vds= 10V.The sixth one is about its static drain to source on state resistance which would be typ 15 and max 20 m with condition of Id= 20 A, Vgs= 10V.The seventh one is about its forward transfer admittance which would be min 20 and max 35 S with condition of Id= 20 A, Vds= 10 V.And so on.For more information please contact us.