2SK2858

      The 2SK2858 is designed as N-channel MOSFET for high speed switching.It has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.
      2SK2858 has two features.The first one is that it could be driven by a 2.5-V power source.The second one is that it would have low gate cut-off voltage.That are all the features.
      Some absolute maximum ratings of 2SK2858 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain to source voltage which would be 30 V.The second one is about its gate to source voltage which would be ±20 V.The third one is about its drain current (DC) which would be ±0.1 A.The fourth one is about its drain current (pulse) which would be ±0.4 A with condition of PW <= 10 ms, Duty Cycle <= 1 %.The fifth one is about its total power dissipation which would be 150 mW.The sixth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature which would be from 55 to +150 °C.Something should be noted that the diode connected between the gate and source of the transistor serves as a protector against ESD.When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
      Also there are some electrical characteristics (Ta = 25°C) about 2SK2858.The first one is about its drain cut-off current which would be max 1 A with condition of Vds = 30 V, Vgs = 0V.The second one is about its gate leakage current which would be max ±10 A with condition of Vgs = ±20 V, Vds = 0V.The third one is about its gate cut-off voltage which would be min 1.0V and typ 1.4V and max 1.8V with condition of Vds = 3 V, Id = 10 A.The fourth one is about its forward transfer admittance which would be min 20 mS with condition of Vds = 3 V, Id = 10 mA.The fifth one is about its input capacitance which would be typ 9pF with condition of Vds=3V, Vgs=0V,f=1MHz.The sixth one is about its output capacitance which would be typ 12pF with condition of Vds=3V, Vgs=0V, f=1MHz.And so on.For more information please contact us.