2SK2903-01MR

      The 2SK2903-01MR is designed as N-channel silicon power MOSFET with typical application of switching regulators,UPS (uninterruptible power supply) and DC-DC converters.
      It has five features.The first one is that it would have high speed switching.The second one is that it would have low on-resistance.The third one is that it would have no secondary breadown.The fourth one is that it would have low driving power.The fifth one is that it would have avalanche-proof.That are all the features.
      Some absolute maximum ratings (Tc=25°C unless otherwise specified) have been concluded into several points as follow.The first one is about its drain to source voltage which would be 60V.The second one is about its continuous drain current which would be ±50A.The third one is about its pulsed drain current which would be ±200A.The fourth one is about its gate-source voltage which would be ±30V.The fifth one is about its maximum avalanche energy which would be 720.8mJ.The sixth one is about its max. power dissipation which would be 50W.The seventh one is about its operating temprrature which would be +150°C.The last one is about its storage temperature range which would be from -55 to +150°C.
      Also there are some important electrical characteristics at Tc = 25°C (unless otherwise specified) about it.The first one is about its drain-source breakdown voltage which would be min 60V with condition of Id=1mA,Vgs=0V.The second one is about its gate threshold voltage which would be min 2.5V and typ 3.0V and max 3.5V with condition of Id=10mA,Vds=Vgs.The third one is about its zero gate voltage drain current which would be typ 0.01mA and max 0.5mA with condition of Tch=25°C and would be typ 0.2mA and max 1.0mA with condition of Tch=125°C.The fourth one is about its gate source leakage current which would be typ 10nA and max 100nA with condition of Vgs=±30V,Vds=0V.The fifth one is about its drain source on-state resistance which would be typ 9.5m and max max 12m with condition of Id=40A,Vgs=10V.The sixth one is about its forward transcondutance which would be min 20S and typ 40S with condition of Id=40A,Vds=25V.And so on.For more information please contact us.