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SeekIC No. : 00164134 Detail

2SK2916(F): MOSFET N-ch 500V 14A 0.4 ohm

2SK2916(F) Data Sheet

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Part Number:: 2SK2916(F)
Mfg:: Toshiba
Supply Ability:: 5000

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1~5000

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Upload time: 2026/1/9

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	30 V	Continuous Drain Current :	14 A
Resistance Drain-Source RDS (on) :	0.4 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-3P(N)IS
Packaging :	Bulk

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 30 V
Drain-Source Breakdown Voltage : 500 V
Packaging : Bulk
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.4 Ohms
Package / Case : TO-3P(N)IS

Parameters:

Technical/Catalog Information	2SK2916(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	400 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	2600pF @ 10V
Power - Max	80W
Packaging	Tube
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	2-16F1B
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2916 F 2SK2916F

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2SK2916(F)

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