Features: ` Low on-resistance RDS =0.020 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 35 A Drain peak current ...
2SK2930: Features: ` Low on-resistance RDS =0.020 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDS...
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 60 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | ID | 35 | A |
| Drain peak current | ID(pulse)Note1 | 140 | A |
| Body to drain diode reverse drain current | IDR | 35 | A |
| Avalanche current | IAPNote3 | 35 | A |
| Avalanche energy | EARNote3 | 105 | mJ |
| Channel dissipation | PchNote2 | 50 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | 55 to +150 |