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2SK2961(F,M)

MOSFET N-CH 60V 2A TO-92

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SeekIC No. : 003433836 Detail

2SK2961(F,M): MOSFET N-CH 60V 2A TO-92

2SK2961(F,M) Data Sheet

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Part Number:
2SK2961(F,M)
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/19

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 2.1 A Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 5.8nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 170pF @ 10V
Power - Max: 900mW Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 2A
Mounting Type: Through Hole
Packaging: Bulk
Vgs(th) (Max) @ Id: 2V @ 1mA
Power - Max: 900mW
Gate Charge (Qg) @ Vgs: 5.8nC @ 10V
Manufacturer: Toshiba
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds: 170pF @ 10V


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