2SK2986

The 2SK2986 is desiged as toshiba field effect transistor silicon N channel MOS type for high current switching applications and DC-DC converter, relay drive and motor drive applications.

2SK2986 has four features. (1)Low drain-source ON resistance which would be typ 4.5m. (2)High forward transfer admittance which would be typ 80S. (3)Low leakage current which would be max 100uA at Vds=60V. (4)Enhancement mode which means Vth is 1.3V to 2.5V at Vds=10V and Id=1mA. Those are all the main features.

Some absolute maximum ratings of 2SK2986 have been concluded into several points as follow. (1)Its drain to source voltage would be 60V. (2)Its grain to gate voltage would be 60V. (3)Its gate to source voltage would be +/-20V. (4)Its drain current would be 55A for DC and would be 280A for pulse. (5)Its drain power dissipation would be 100W. (6)Its single pulse avalanche energy would be 525mJ. (7)Its avalanche current would be 55A. (8)Repetitive avalanche energy would be 10mJ. (9)Its channel temperature would be 150°C. (10)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SK2986 are concluded as follow. (1)Its gate leakage current would be max +/-10uA. (2)Its drain cutoff current would be max 100uA. (3)Its drain to source breakdown voltage would be min 60V at Vgs=0 and would be min 40V at Vgs=-20V. (4)Its gate threshold voltage would be min 1.3V and max 2.5V. (5)Its forward transfer admittance would be min 40S and typ 80S.

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