2SK3018T106

MOSFET N-CH 30V .1A SOT-323

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SeekIC No. : 00150901 Detail

2SK3018T106: MOSFET N-CH 30V .1A SOT-323

floor Price/Ceiling Price

US $ .07~.24 / Piece | Get Latest Price
Part Number:
2SK3018T106
Mfg:
ROHM Semiconductor
Supply Ability:
5000

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  • 100~500
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  • $.07
  • Processing time
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Upload time: 2024/4/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.1 A
Resistance Drain-Source RDS (on) : 7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : UMT-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 0.1 A
Resistance Drain-Source RDS (on) : 7 Ohms
Package / Case : UMT-3


Features:

  Connection Diagram


Specifications

  Connection Diagram


Description

The 2SK3018T106 is designed as one kind of small switching (30V, 0.1A) device with the structure of silicon N-channel MOS FET transistor. Features of this device are:(1)Low on-resistance; (2)Fast switching speed; (3)Low voltage drive (2.5V) makes this device ideal for portable equipment; (4)Easily designed drive circuits; (5)Easy to parallel. And this device can be used in interfacing, switching (30V, 100mA) applications.

The absolute maximum ratings of the 2SK3018T106 can be summarized as:(1)Drain-source voltage: 30 V;(2)Gate-source voltage: ±20 V;(3)Drain current: 0.1 or 0.4 A;(4)Total power dissipation: 150 mW; (5)Channel temperature: 150 ;(6)Storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Gate-source leakage: ±1 uA;(2)Drain-source breakdown voltage: 30 V;(3)Zero gate voltage drain current: 1.0 uA;(4)Gate threshold voltage: 0.8 to 1.5 V;(5)Forward transfer admittance: 20 mS;(6)Input capacitance: 13 pF;(7)Output capacitance: 9 pF;(8)Reverse transfer capacitance: 4 pF;(9)Turn-on delay time: 15 ns;(10)Rise time: 35 ns. If you want to know more information about the 2SK3018T106, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog Information2SK3018T106
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C100mA
Rds On (Max) @ Id, Vgs8 Ohm @ 10mA, 4V
Input Capacitance (Ciss) @ Vds 13pF @ 5V
Power - Max200mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseSC-70-3, SOT-323-3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK3018T106
2SK3018T106
2SK3018T106TR ND
2SK3018T106TRND
2SK3018T106TR



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