2SK3018 T106

The 2SK3018T106 is designed as one kind of small switching (30V, 0.1A) device with the structure of silicon N-channel MOS FET transistor. Features of this device are:(1)Low on-resistance; (2)Fast switching speed; (3)Low voltage drive (2.5V) makes this device ideal for portable equipment; (4)Easily designed drive circuits; (5)Easy to parallel. And this device can be used in interfacing, switching (30V, 100mA) applications.

The absolute maximum ratings of the 2SK3018T106 can be summarized as:(1)Drain-source voltage: 30 V;(2)Gate-source voltage: ±20 V;(3)Drain current: 0.1 or 0.4 A;(4)Total power dissipation: 150 mW; (5)Channel temperature: 150 ;(6)Storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Gate-source leakage: ±1 uA;(2)Drain-source breakdown voltage: 30 V;(3)Zero gate voltage drain current: 1.0 uA;(4)Gate threshold voltage: 0.8 to 1.5 V;(5)Forward transfer admittance: 20 mS;(6)Input capacitance: 13 pF;(7)Output capacitance: 9 pF;(8)Reverse transfer capacitance: 4 pF;(9)Turn-on delay time: 15 ns;(10)Rise time: 35 ns. If you want to know more information about the 2SK3018T106, please download the datasheet in www.seekic.com or www.chinaicmart.com .