SpecificationsDescriptionThe 2SK3019 TL is designed as one kind of small switching (30V, 0.1A) device with the structure of silicon N-channel MOS FET transistor. Features of this device are:(1)Low on-resistance; (2)Fast switching speed; (3)Low voltage drive (2.5V) makes this device ideal for porta...
2SK3019 TL: SpecificationsDescriptionThe 2SK3019 TL is designed as one kind of small switching (30V, 0.1A) device with the structure of silicon N-channel MOS FET transistor. Features of this device are:(1)Low o...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The 2SK3019 TL is designed as one kind of small switching (30V, 0.1A) device with the structure of silicon N-channel MOS FET transistor. Features of this device are:(1)Low on-resistance; (2)Fast switching speed; (3)Low voltage drive (2.5V) makes this device ideal for portable equipment; (4)Easily designed drive circuits; (5)Easy to parallel. And this device can be used in interfacing, switching (30V, 100mA) applications.
The absolute maximum ratings of the 2SK3019 TL can be summarized as:(1)Drain-source voltage: 30 V;(2)Gate-source voltage: ±20 V;(3)Drain current: 0.1 or 0.4 A;(4)Total power dissipation: 150 mW; (5)Channel temperature: 150 ;(6)Storage temperature: -55 to +150 .
The electrical characteristics of 2SK3019 TL can be summarized as:(1)Gate-source leakage: ±1 uA;(2)Drain-source breakdown voltage: 30 V;(3)Zero gate voltage drain current: 1.0 uA;(4)Gate threshold voltage: 0.8 to 1.5 V;(5)Forward transfer admittance: 20 mS;(6)Input capacitance: 13 pF;(7)Output capacitance: 9 pF;(8)Reverse transfer capacitance: 4 pF;(9)Turn-on delay time: 15 ns;(10)Rise time: 35 ns. If you want to know more information about the 2SK3019 TL, please download the datasheet in www.seekic.com or www.chinaicmart.com .