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2SK3046

MOSFET N-CH 500V 7A TO-220D

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SeekIC No. : 003431478 Detail

2SK3046: MOSFET N-CH 500V 7A TO-220D

2SK3046 Data Sheet

floor Price/Ceiling Price

US $ .68~1.46 / Piece | Get Latest Price
Part Number:
2SK3046
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • Unit Price
  • $1.46
  • $1.18
  • $1.06
  • $.94
  • $.82
  • $.68
  • $.68
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1200pF @ 20V
Power - Max: 40W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 7A
Mounting Type: Through Hole
Power - Max: 40W
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220D-A1
Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds: 1200pF @ 20V


Features:

·Avalanche energy capacity guaranteed: EAS > 130mJ
·VGSS = ±30V guaranteed
·High-speed switching: tf = 60ns
·No secondary breakdown


Application

·Contactless relay
·Diving circuit for a solenoid
·Driving circuit for a motor
·Control equipment
·Switching power supply


Specifications

Parameter Symbol Ratings Unit
Drain to Source breakdown voltage VDSS 500 V
Gate to Source voltage VGSS ±30 V
Drain current DC ID ±7 A
Pulse IDP ±14 A
Avalanche energy capacity EAS* 130 mJ
Allowable power TC = 25°C PD 40 W
Ta = 25°C 2
Channel temperature Tch 150 °C
Storage temperature Tstg -55 to +150 °C
* L = 5.4mH, IL = 7A, 1 pulse


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