2SK3051

The 2SK3051 is desiged as toshiba field effect transistor silicon N channel MOS type for high speed, high current switching applications chopper regulator, DC-DC converter ad motor drive applications.

2SK3051 has four features. (1)Low drain-source ON resistance which would be typ 24m. (2)High forward transfer admittance which would be typ 27S. (3)Low leakage current which would be max 100uA at Vds=50V. (4)Enhancement mode which means Vth is 1.5V to 3.0V at Vds=10V and Id=1mA. Those are all the main features.

Some absolute maximum ratings of 2SK3051 have been concluded into several points as follow. (1)Its drain to source voltage would be 50V. (2)Its grain to gate voltage would be 50V. (3)Its gate to source voltage would be +/-20V. (4)Its drain current would be 45A for DC and would be 135A for pulse. (5)Its drain power dissipation would be 40W. (6)Its single pulse avalanche energy would be 115mJ. (7)Its avalanche current would be 45A. (8)Repetitive avalanche energy would be 4mJ. (9)Its channel temperature would be 150°C. (10)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SK3051 are concluded as follow. (1)Its gate leakage current would be max +/-10uA. (2)Its drain cutoff current would be max 100uA. (3)Its drain to source breakdown voltage would be min 50V at Vgs=0. (4)Its gate threshold voltage would be min 1.5V and max 3.0V. (5)Its forward transfer admittance would be min 15S and typ 27S.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!