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2SK3061

Features: ` Low on-state resistance - RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 35 A) - RDS(on)2 = 12 m MAX. (VGS = 4.0 V, ID = 35 A)` Low Ciss: Ciss = 5200 pF TYP.` Built-in gate protection diode` Isolated TO-220 packageSpecifications Drain to Source Voltage VDSS 60 V Gate to Source Volt...

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SeekIC No. : 004226512 Detail

2SK3061: Features: ` Low on-state resistance - RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 35 A) - RDS(on)2 = 12 m MAX. (VGS = 4.0 V, ID = 35 A)` Low Ciss: Ciss = 5200 pF TYP.` Built-in gate protection diode` Is...

2SK3061 Data Sheet

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Part Number:
2SK3061
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

` Low on-state resistance
  - RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 35 A)
  - RDS(on)2 = 12 m MAX. (VGS = 4.0 V, ID = 35 A)
` Low Ciss: Ciss = 5200 pF TYP.
` Built-in gate protection diode
` Isolated TO-220 package


Specifications

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS(AC) ±20 V
Gate to Source Voltage VGSS(DC) +20, -10 V
Drain Current (DC) ID(DC) ±70 A
Drain Current (Pulse) Note1 ID(pulse) ±280 A
Total Power Dissipation (TC = 25°C) PT 35 W
Total Power Dissipation (TA = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 35 A
Single Avalanche Energy Note2 EAS 122.5 mJ

Notes 1. PW 10 s, Duty cycle 1 %
          2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V




Description

2SK3061 is N-Channel MOS Field Effect Transistor designed for high current switching application.


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