Position: Home  > All Categories> Integrated Circuits (ICs) > 2SK3062

2SK3062

Features: * Low on-state resistance RDS(on)1 = 8.5 m? MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 m? MAX. (VGS = 4.0 V, ID = 35 A)* Low Ciss: Ciss = 5200 pF TYP.* Built-in gate protection diodeSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 60 VGate to Source Voltage (VDS = 0 V) VGSS(AC) ±20...

product image

2SK3062 Picture
See larger image
SeekIC No. : 004226513 Detail

2SK3062: Features: * Low on-state resistance RDS(on)1 = 8.5 m? MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 m? MAX. (VGS = 4.0 V, ID = 35 A)* Low Ciss: Ciss = 5200 pF TYP.* Built-in gate protection diodeSpecif...

2SK3062 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2SK3062
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* Low on-state resistance
   RDS(on)1 = 8.5 m? MAX. (VGS = 10 V, ID = 35 A)
   RDS(on)2 = 12 m? MAX. (VGS = 4.0 V, ID = 35 A)
* Low Ciss: Ciss = 5200 pF TYP.
* Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V
Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, -10 V
Drain Current (DC) ID(DC) ±70 A
Drain Current (Pulse)[Note1]ID(pulse) ±280 A
Total Power Dissipation (TC = 25°C) PT 100 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current[Note2]IAS 35 A
Single Avalanche Energy[Note2]EAS 122.5 mJ


Description

2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Prototyping Products
AVT4168
DE1
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more