2SK3065T100

MOSFET N-CH 60V 2A

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SeekIC No. : 00151075 Detail

2SK3065T100: MOSFET N-CH 60V 2A

floor Price/Ceiling Price

US $ .15~.34 / Piece | Get Latest Price
Part Number:
2SK3065T100
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • 500~1000
  • Unit Price
  • $.34
  • $.29
  • $.26
  • $.18
  • $.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.35 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : MPT3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.35 Ohms
Package / Case : MPT3


Specifications

  Connection Diagram


Description

The 2SK3065T100 is designed as one kind of small switching (60V, 2A) device with the structure of silicon N-channel MOS FET transistor. Features of this device are:(1)Low on resistance; (2)High-speed switching; (3)Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation); (4)Driving circuit is easy; (5)Easy to use parallel; (6)It is strong to an electrostatic discharge.

The absolute maximum ratings of the 2SK3065T100 can be summarized as:(1)Drain-source voltage: 60 V;(2)Gate-source voltage: ±20 V;(3)Drain current: 2 or 8 A;(4)Reverse drain current: 2 or 8 A;(5)Reverse drain current: 0.5 or 2 W;(6)Channel temperature: 150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of 2SK3065T100 can be summarized as:(1)Gate-source leakage: ±10 uA;(2)Drain-source breakdown voltage: 60 V;(3)Zero gate voltage drain current: 10 uA;(4)Gate threshold voltage: 0.8 to 1.5 V;(5)Forward transfer admittance: 1.5 S;(6)Input capacitance: 160 pF;(7)Output capacitance: 85 pF;(8)Reverse transfer capacitance: 25 pF;(9)Turn-on delay time: 20 ns;(10)Rise time: 50 ns. If you want to know more information about the 2SK3065T100, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog Information2SK3065T100
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs320 mOhm @ 1A, 4V
Input Capacitance (Ciss) @ Vds 160pF @ 10V
Power - Max500mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseSC-62, SOT-89, MPT3 (3 leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SK3065T100
2SK3065T100
2SK3065T100CT ND
2SK3065T100CTND
2SK3065T100CT



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