2SK3075

The 2SK3075 is desiged as toshiba field effect transistor silicon N channel MOS type for VHF and UHF band power amplifier applications.

2SK3075 has three features. (1)Its output power would be min 7.5W. (2)Its power gain would be min 11.7dB. (3)Its drain efficiency would be larger than 50%. Those are all the main features.

Some absolute maximum ratings of 2SK3075 have been concluded into several points as follow. (1)Its drain to source voltage would be 30V. (2)Its gate to source voltage would be 25V. (3)Its drain current would be 5A. (4)Its drain power dissipation would be 20W. (5)Its channel temperature would be 150°C. (6)Its storage temperature range would be from -45°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SK3075 are concluded as follow. (1)Its output power would be min 7.5W with conditions of Vds=9.6V Iidle=50mA and f=520MHz and Pi=50mW. (2)Its drain efficiency would be min 50% with conditions of Vds=9.6V Iidle=50mA and f=520MHz. (3)Its power gain would be min 11.7dB with conditions of Vds=9.6V Iidle=50mA and f=520MHz. (4)Its gate threshold voltage would be min 1.0V and typ 1.5V and max 2.0V with conditions of Vds=9.6V and Id=0.5mA. (5)Its drain cutoff current would be max 10uA with conditions of Vds=20V and Vgs=0. (6)Its gate to source leakage current would be max 5uA with conditions of Vgs=10V and Vds=0.

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