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2SK3109

Features: ` Gate voltage rating ±30 V` Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A)` Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)` Avalanche capability rated` Built-in gate protection diode` Surface mount device availableSpecifications Drain to sour...

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SeekIC No. : 004226547 Detail

2SK3109: Features: ` Gate voltage rating ±30 V` Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A)` Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)` Avalanche capability ra...

2SK3109 Data Sheet

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Part Number:
2SK3109
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Gate voltage rating ±30 V
` Low on-state resistance RDS(on) = 0.4   MAX. (VGS = 10 V, ID = 5.0 A)
` Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
` Avalanche capability rated
` Built-in gate protection diode
` Surface mount device available


Specifications

Drain to source voltage (VGS = 0 V)
Gate to source voltage (VDS = 0 V)
Drain current (DC) (TC = 25 °C)
Drain current (pulse) Note1
Total power dissipation (TA = 25 °C)
Total power dissipation (TC = 25 °C)
Channel temperature
Storage temperature
Single avalanche current Note2
Single avalanche energy Note2
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
200
±30
±10
±30
1.5
50
150
-55 to +150
10
35
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW £ 10 s, Duty Cycle  1 %
2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 W, VGS = 20 V®0 V


Description

The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.




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