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2SK3111

Features: · Gate voltage rating ±30 V· Low on-state resistance RDS(on) = 180 mW MAX. (VGS = 10 V, ID = 10 A)· Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)· Avalanche capability rated· Built-in gate protection diode· Surface mount device availableSpecificationsDrain to source v...

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SeekIC No. : 004226549 Detail

2SK3111: Features: · Gate voltage rating ±30 V· Low on-state resistance RDS(on) = 180 mW MAX. (VGS = 10 V, ID = 10 A)· Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)· Avalanche capability ...

2SK3111 Data Sheet

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Part Number:
2SK3111
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Gate voltage rating ±30 V
· Low on-state resistance
  RDS(on) = 180 mW MAX. (VGS = 10 V, ID = 10 A)
· Low input capacitance
  Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
· Avalanche capability rated
· Built-in gate protection diode
· Surface mount device available


Specifications

Drain to source voltage (VGS = 0 V)                  VDSS        200          V
Gate to source voltage (VDS = 0 V)                   VGSS        ±30          V
Drain current (DC) (TC = 25 °C)                        ID(DC)       ±20          A
Drain current (pulse) Note1                           ID(pulse)      ±60          A
Total power dissipation (TA = 25 °C)                 PT1           1.5          W
Total power dissipation (TC = 25 °C)                 PT2           65           W
Channel temperature                                        Tch 1          50          °C
Storage temperature                                         Tstg     -55 to +150  °C
Single avalanche current Note2                          IAS            20            A
Single avalanche energy Note2                          EAS          100          mJ

Notes 1. PW10 s, Duty Cycle 1 %
2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 W, VGS = 20 V0 V


Description

The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.




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