2SK3112 Selling Leads, Price trend, 2SK3112 DataSheet download, circuit diagram from SeekIC.com

Features: • Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 110 m MAX. (VGS = 10 V, ID = 13 A)• Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)• Avalanche capability rated• Built-in gate protection diode• Surface mount device avail...

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SeekIC No. : 004226550 Detail

2SK3112: Features: • Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 110 m MAX. (VGS = 10 V, ID = 13 A)• Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)•...

2SK3112 Data Sheet

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Part Number:: 2SK3112
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/30

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Product Details

Description

Features:

• Gate voltage rating ±30 V
• Low on-state resistance R_DS(on) = 110 m MAX. (V_GS = 10 V, I_D = 13 A)
• Low input capacitance C_iss = 1600 pF TYP. (V_DS = 10 V, V_GS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available

Specifications

Drain to Source Voltage (V_GS = 0 V)	V_DSS	200	V
Gate to Source Voltage (V_DS = 0 V)	V_GSS	±30	V
Drain Current(DC) (T_C = 25)	I_D(DC)	±14	A
Drain Current(pulse) Note1	I_D(pulse)	±42	A
Total Power Dissipation (T_A = 25)	P_T1	2.0	W
Total Power Dissipation (T_C = 25)	P_T2	35	W
Channel Temperature	T_ch	150
Storage Temperature	T_stg	55 to +150
Single Avalanche Current ^Note2	I_AS	14	A
Single Avalanche Energy ^Note2	E_AS	98	mJ

Notes
1. P_W 10 s, Duty Cycle 1%
2. Starting T_ch = 25, V_DD = 100 V, R_G = 25 , V_GS = 20 V0 V

Description

The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.

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2SK3112

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