2SK3113

Features: • Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A)• Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)• Gate voltage rating ±30 V• Avalanche capability ratingsSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 600 VGate to...

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SeekIC No. : 004226551 Detail

2SK3113: Features: • Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A)• Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)• Gate voltage rating ±30 V...

floor Price/Ceiling Price

Part Number:
2SK3113
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

• Low on-state resistance
  RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge
  QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating ±30 V
• Avalanche capability ratings



Specifications

Drain to Source Voltage (VGS = 0 V)                     VDSS        600         V
Gate to Source Voltage (VDS = 0 V)                      VGSS        ±30         V
Drain Current (DC) (TC = 25°C)                             ID(DC)     ±2.0         A
Drain Current (pulse) Note1                                  ID(pulse)   ±8.0         A
Total Power Dissipation (TC = 25°C)                       PT1          20          W
Total Power Dissipation (TA = 25°C) Note2              PT2         1.0          W
Channel Temperature                                             Tch          150        °C
Storage Temperature                                             Tstg  55 to +150  °C
Single Avalanche Current Note3                              IAS           2.0          A
Single Avalanche Energy Note3                               EAS          2.7         mJ

Notes 1. PW 10 s, Duty Cycle 1%
2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V



Description

The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.




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