Features: • Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A)• Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)• Gate voltage rating ±30 V• Avalanche capability ratingsSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 600 VGate to...
2SK3113: Features: • Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A)• Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)• Gate voltage rating ±30 V...
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The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.