2SK3114B-S17-AY

The 2SK3114B-S17-AY is designed as one kind of N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter. And this device has three points of features such as (1)Low gate charge;(2)Gate voltage rating ±30 V, QG = 15 nC TYP. (ID = 4.0 A, VDD = 450 V, VGS = 10 V);(3)Low on-state resistance: RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.0 A);(4)Avalanche capability ratings.

The absolute maximum ratings of the 2SK3114B-S17-AY can be summarized as:(1)Drain to Source Voltage: 600 V;(2)Gate to Drain Voltage: +/-30 V;(3)Drain Current: +/-4.0 A;(4)Diode Recovery dv/dt: 3.5 V/ns;(5)Total Power Dissipation: 2000 mW;(6)Channel Temperature: 150 °C;(7)Storage Temperature:55 to +150 °C.

The electrical characteristics of this device can be summarized as:(1)Zero Gate Voltage Drain Cut-off Current: 100 A;(2)Gate Cut-off Voltage:2.5 to 3.5 V;(3)Forward Transfer Admittance: 1.0 S;(4)Output Capacitance: 115 pF;(5)Input Capacitance: 550 pF;(6)Reverse Transfer Capacitance: 13 pF. If you want to know more information such as the electrical characteristics about the 2SK3114B-S17-AY, please download the datasheet in www.seekic.com or www.chinaicmart.com.