2SK3115_1377661

Features: ` Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)` Gate voltage rating ±30 V` Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.0 A)` Avalanche capability ratingsSpecificationsDrain to Source Voltage(V GS = 0 V) VDSS600 VGate to Source Voltage (VDS = 0 ...

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SeekIC No. : 004226554 Detail

2SK3115_1377661: Features: ` Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)` Gate voltage rating ±30 V` Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.0 A)` Avalanche capabilit...

floor Price/Ceiling Price

Part Number:
2SK3115_1377661
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

` Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
` Gate voltage rating ±30 V
` Low on-state resistance RDS(on) = 1.2  MAX. (VGS = 10 V, ID = 3.0 A)
` Avalanche capability ratings



Specifications

Drain to Source Voltage(V GS = 0 V)                 VDSS         600             V
Gate to Source Voltage (VDS = 0 V)                  VGSS         ±30            V
Drain Current (DC) (TC = 25°C)                       ID(DC)       ±6.0           A
Drain Current (pulse) Note1                               ID(pulse)  ±24            A
Total Power Dissipation (TA = 25°C)                PT1           2.0             W
Total Power Dissipation (TC = 25°C)                PT2           35              W
Channel Temperature                                       Tch 150                       °C
Storage Temperature                                       Tstg         -55 to +150 °C
Single Avalanche Current Note2                       IAS           6.0               A
Single Avalanche Energy Note2                        EAS          24                mJ
Notes 1. PW 10 s, Duty Cycle 1%
          2. Starting Tch = 25°C, VDD = 150 V, RG = 25, VGS = 20 ® 0 V



Description

The 2SK3115_1377661 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics,  nd designed for high voltage applications such as switching power supply, AC adapter.




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