2SK3117

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 20A
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Gate Charge (Qg) @ Vgs: 80nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 150W
Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 3720pF @ 10V
Supplier Device Package: TO-3P(SM)


Parameters:

Technical/Catalog Information	2SK3117
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	270 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	3720pF @ 10V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	2-16H1B
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SK3117 2SK3117