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2SK3117

MOSFET N-CH 500V 20A TO-3PSM

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SeekIC No. : 003431988 Detail

2SK3117: MOSFET N-CH 500V 20A TO-3PSM

2SK3117 Data Sheet

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Part Number:
2SK3117
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 500V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 20A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 80nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3720pF @ 10V
Power - Max: 150W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-3P(SM)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 20A
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Gate Charge (Qg) @ Vgs: 80nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 150W
Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 3720pF @ 10V
Supplier Device Package: TO-3P(SM)


Parameters:

Technical/Catalog Information2SK3117
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs270 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 3720pF @ 10V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / Case2-16H1B
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2SK3117
2SK3117



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