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Application• Reverse-recovery time: trr = 85 ns• Built-in high-speed flywheel diode• Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)• High forward transfer admittance: |Yfs| = 5.0 S (typ.)• Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)...

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SeekIC No. : 004226563 Detail

2SK3130: Application• Reverse-recovery time: trr = 85 ns• Built-in high-speed flywheel diode• Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)• High forward transfer adm...

2SK3130 Data Sheet

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Part Number:: 2SK3130
Supply Ability:: 5000

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Upload time: 2025/12/25

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Product Details

Description

Application

• Reverse-recovery time: trr = 85 ns
• Built-in high-speed flywheel diode
• Low drain-source ON resistance: R_DS (ON) = 1.12 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: I_DSS = 100 µA (max) (V_DS = 600 V)
• Enhancement model: V_th = 2.0~4.0 V (V_DS = 10 V, ID = 1 mA)

Specifications

Item	SYMBOL	RATINGS	UNIT
Drain-source voltage	V _DSS	600	V
Drain-gate voltage (R_GS= 20 k)	V_DGR	600	V
Gate-source voltage	V_GSS	±30	V
Drain- Current (DC) (Note 1)	I _D	6	A
Drain- Current (puls) (Note 1)	I _DP	24	A
Drain power dissipation (Tc = 25°C)	P_D	40	W
Single pulse avalanche energy (Note 2)	E_AS	345	W
Avalanche current	I_AR	6	mJ
Repetitive avalanche energy (Note 3)	E_AR	4	MJ
Channel temperature	T_ch	150	°C
Storage temperature range	T_stg	-55 ~ +150	°C

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2SK3130

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