2SK3131

MOSFET N-CH 500V 50A TO-3P(L)

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SeekIC No. : 003431991 Detail

2SK3131: MOSFET N-CH 500V 50A TO-3P(L)

floor Price/Ceiling Price

Part Number:
2SK3131
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 500V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 110 mOhm @ 25A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.4V @ 1mA Gate Charge (Qg) @ Vgs: 280nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 11000pF @ 10V
Power - Max: 250W Mounting Type: Through Hole
Package / Case: TO-3PL Supplier Device Package: TO-3P(L)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 50A
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 250W
Gate Charge (Qg) @ Vgs: 280nC @ 10V
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 11000pF @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 1mA
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 25A, 10V


Application

·Fast reverse recovery time : trr = 105 ns (typ.)
·Built-in high-speed free-wheeling diode
·Low drain−source ON resistance : RDS (ON) = 0.085 Ω (typ.)
·High forward transfer admittance : |Yfs| = 35 S (typ.)
· Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
· Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)



Specifications

Item
SYMBOL
RATINGS
UNIT
Drain-source voltage
V DSS
500
V
Drain-gate voltage (RGS = 20 k)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
Drain- Current (DC) (Note 1)
I D
50
A
Drain- Current (puls) (Note 1)
I DP
200
A
Drain power dissipation (Tc = 25°C)
PD
250
W
Single pulse avalanche energy (Note 2)
EAS
525
W
Avalanche current
IAR
50
mJ
Repetitive avalanche energy (Note 3)
EAR
25
MJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 ~ +150
°C



Parameters:

Technical/Catalog Information2SK3131
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs110 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 11000pF @ 10V
Power - Max250W
PackagingTube
Gate Charge (Qg) @ Vgs280nC @ 10V
Package / CaseTO-3P(L) (2-21F1B)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2SK3131
2SK3131



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