Features: • Low on-resistance RDS = 45 mΩ typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current I D ...
2SK3150L_1377718: Features: • Low on-resistance RDS = 45 mΩ typ.• High speed switching• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit D...
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| Item | Symbol | Rating | Unit |
| Drain to source voltage | VDSS | 100 | V |
| Gate to source voltage | VGSS | ±20 | V |
| Drain current | I D | 20 | A |
| Drain peak current | I D(puls)Note1 | 60 | A |
| Body to drain diode reverse drain current | IDR | 20 | A |
| Avalanche current | IAP Note3 | 20 | A |
| Avalanche energy | EAR Note3 | 40 | mJ |
| Channel dissipation | Pch Note2 | 50 | W |
| Channel temperature | T ch | 150 | |
| Storage temperature | T stg | -55 to +150 |