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2SK3152

Features: ` Low on-resistance RDS = 100 m typ.` High speed switching` 4 V gate drive device can be driven from 5 V sourceSpecifications Item SYMBOL RATINGS UNIT Drain to source voltage VDSS 120 V Gate to source voltage VGSS ±20 V Drain current ID ...

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SeekIC No. : 004226576 Detail

2SK3152: Features: ` Low on-resistance RDS = 100 m typ.` High speed switching` 4 V gate drive device can be driven from 5 V sourceSpecifications Item SYMBOL RATINGS UNIT Drain to source v...

2SK3152 Data Sheet

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Part Number:
2SK3152
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  Low on-resistance RDS = 100 m typ.
`  High speed switching
`  4 V gate drive device can be driven from 5 V source


Specifications

Item
SYMBOL
RATINGS
UNIT
Drain to source voltage
VDSS
120
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
10
A
Drain peak current
I D(pulse)Note 1
40
A
Body-drain diode reverse drain current
IDR
10
A
Avalanche current
IAPNote 3
10
A
Avalanche energy
EARNote 3
8.5
mJ
Channel dissipation
Pch Note 2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Note: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50


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