Features: ` Low on-resistance RDS =35m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID 30...
2SK3158: Features: ` Low on-resistance RDS =35m typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source volta...
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|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
150 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
30 |
A |
| Drain peak current |
ID(pulse)Note1 |
120 |
A |
| Body-drain diode reverse drain current |
IDR |
30 |
A |
| Avalanche current |
IAPNote3 |
30 |
A |
| Avalanche energy |
EARNote3 |
67 |
mJ |
| Channel dissipation |
Pch Note2 |
100 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
55 to +150 |
°C |