Features: • Low on-resistance RDS(on)= 6 mΩ typ.• Low drive current• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current I D 7...
2SK3163_1377721: Features: • Low on-resistance RDS(on)= 6 mΩ typ.• Low drive current• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Dr...
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Item | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | I D | 75 | A |
Drain peak current | I D(puls)Note1 | 300 | A |
Body to drain diode reverse drain current | IDR | 75 | A |
Avalanche current | IAP Note3 | 50 | A |
Avalanche energy | EAR Note3 | 214 | mJ |
Channel dissipation | Pch Note2 | 110 | W |
Channel temperature | T ch | 150 | |
Storage temperature | T stg | -55 to +150 |