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2SK3163_1377721

Features: • Low on-resistance RDS(on)= 6 mΩ typ.• Low drive current• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current I D 7...

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SeekIC No. : 004226588 Detail

2SK3163_1377721: Features: • Low on-resistance RDS(on)= 6 mΩ typ.• Low drive current• 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Rating Unit Dr...

2SK3163_1377721 Data Sheet

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Part Number:
2SK3163_1377721
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•  Low on-resistance
    RDS(on) = 6 mΩ typ.
•  Low drive current
•  4 V gate drive device can be driven from 5 V source


Specifications

</tabl
Item Symbol Rating Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current I D 75 A
Drain peak current I D(puls)Note1 300 A
Body to drain diode reverse drain current IDR 75 A
Avalanche current IAP Note3 50 A
Avalanche energy EAR Note3 214 mJ
Channel dissipation Pch Note2 110 W
Channel temperature T ch 150
Storage temperature T stg -55 to +150
Note: 1. PW 10 µs, duty cycle 1%
          2. Value at Tc = 25°C
          3. Value at Tch = 25°C, Rg 50 Ω


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