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2SK3221

Features: ` Low gate charge - QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)` Gate voltage rating ±30 V` Low oN-state resistance - RDS(on) = 4.4 (MAX.) (VGS = 10 V, ID = 1.0 A)` Avalanche capability ratings` Isolated TO-220 packageSpecifications Drain to Source Voltage(VGS = 0 V) VDSS...

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SeekIC No. : 004226607 Detail

2SK3221: Features: ` Low gate charge - QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)` Gate voltage rating ±30 V` Low oN-state resistance - RDS(on) = 4.4 (MAX.) (VGS = 10 V, ID = 1.0 A)` Avalanche cap...

2SK3221 Data Sheet

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Part Number:
2SK3221
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low gate charge
  - QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
` Gate voltage rating ±30 V
` Low oN-state resistance
  - RDS(on) = 4.4 (MAX.) (VGS = 10 V, ID = 1.0 A)
` Avalanche capability ratings
` Isolated TO-220 package


Specifications

Drain to Source Voltage(VGS = 0 V) VDSS 600 V
Gate to Source Voltage(VDS = 0 V) VGSS ±30 V
Drain Current (DC)(TC = 25°C) ID(DC) ±2.0 A
Drain Current (Pulse) Note1 ID(pulse) ±8.0 A
Total Power Dissipation (TC = 25°C) PT1 2.0 W
Total Power Dissipation (TA = 25°C) PT2 25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS 2 A
Single Avalanche Energy Note2 EAS 2.7 mJ
Diode recovery dv/dtNote3 dv/dt 3.5 V/ns

Notes 1. PW 10 s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0 V
3. IF 1.0 A, Vclamp = 600 V, di/dt 100 A/ s, TA = 25°C




Description

The 2SK3221 is N channel DMOS FET device that features a  low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.




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