Features: ` Low On-State Resistance - RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 17 A) - RDS(on)2 = 27 m MAX. (VGS = 4.0 V, ID = 17 A)` Low Ciss : Ciss = 2100 pF TYP.` Built-in Gate Protection Diode` TO-251/TO-252 packageSpecifications Drain to Source Voltage VDSS 60 V Gate to Source Voltag...
2SK3225: Features: ` Low On-State Resistance - RDS(on)1 = 18 m MAX. (VGS = 10 V, ID = 17 A) - RDS(on)2 = 27 m MAX. (VGS = 4.0 V, ID = 17 A)` Low Ciss : Ciss = 2100 pF TYP.` Built-in Gate Protection Diode` TO...
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Drain to Source Voltage | VDSS | 60 | V |
Gate to Source Voltage | VGSS(AC) | ±20 | V |
Gate to Source Voltage | VGSS(DC) | +20, -10 | V |
Drain Current (DC) | ID(DC) | ±34 | A |
Drain Current (Pulse) Note | ID(pulse) | ±136 | A |
Total Power Dissipation(TC = 25°C) | PT | 4.0 | W |
Total Power Dissipation(TA = 25°C) | PT | 2.0 | W |
Channel Temperature | Tch | 150 | °C |
Storage Temperature | Tstg | 55 to +150 | °C |
Notes: PW 10 s, Duty cycle 1 %