Features: · Low on-resistance: RDS(on) = 0.3 W typ.· Low leakage current: IDSS = 1 mA max (at VDS = 500 V)· High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)· Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A)· Avalanche ratingsSpecifications ...
2SK3235: Features: · Low on-resistance: RDS(on) = 0.3 W typ.· Low leakage current: IDSS = 1 mA max (at VDS = 500 V)· High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)· Low gate ch...
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|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
500 |
V |
| Gate to source voltage |
VGSS |
±30 |
V |
| Drain current |
ID |
15 |
A |
| Drain peak current |
ID (pulse) Note1 |
60 |
A |
| Body-drain diode reverse drain current |
IDR |
15 |
A |
| Body-drain diode reverse drain peak current |
IDR (pulse)Note1 |
60 |
A |
| Avalanche current |
IAP Note3 |
15 |
A |
| Channel dissipation |
PchNote2 |
150 |
W |
| Channel to case Thermal Impedance |
q ch-c |
0.833 |
°CW |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
55 to +150 |
°C |