2SK3265(F,T), US $ 1.48-1.48, 2SK3265(F,T) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003431994 Detail

2SK3265(F,T): MOSFET N-CH 700V 10A TO220NIS

2SK3265(F,T) Data Sheet

US $ 1.48~1.48 / Piece | Get Latest Price

Part Number:: 2SK3265(F,T)
Mfg:
Supply Ability:: 5000

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Product Details

Quick Details

Series:	-	Manufacturer:	Toshiba
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Current - Collector (Ic) (Max):	-	FET Feature:	Standard
Drain to Source Voltage (Vdss):	700V	Continuous Drain Current :	2.1 A
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	10A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	1 Ohm @ 5A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 1mA	Gate Charge (Qg) @ Vgs:	53nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1700pF @ 25V
Power - Max:	45W	Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack	Supplier Device Package:	TO-220NIS

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 53nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 10A
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1700pF @ 25V
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 45W
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
Manufacturer: Toshiba
Drain to Source Voltage (Vdss): 700V
Supplier Device Package: TO-220NIS

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2SK3265(F,T)

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