2SK3316

The 2SK3316 is a kind of TOSHIBA field effect transistor which is desiged for the high speed, high current switching applications and switching regulator applications.Features of 2SK3316 are:(1)low drain-source ON resistance: RDS(ON) is 1.6 ohms typ; (2)high forward transfer admittance: Yfs is 3.8 S typ; (3)enhancement-mode: Vth is 2.0 V to 4.0 V(VDS is 10 V and ID is 1 mA); (4)low leakage current: IDSS is 100 uA max when VDS is 500 V.

The absolute maximum ratings of 2SK3316 can be summerized as:(1): drain-source voltage, VDSS is 500 V; (2): drain-gate voltage(RGS is 20 kohms), VDGR is 500 V; (3): gate-source voltage, VGSS is ±30 V; (4): DC drain current, ID is 5 A; (5): drain power dissipation(ta is 25), PD is 35 W; (6): single pulse avalanche ennergy, EAS is 180 mJ; (7): avalanche current, IAR is 5 A; (8): repetitive avalanche energy, EAR is 3.5 mJ; (9): channel temperature, Tch is 150; (10): storage temeprature range, tstg is -55 to 150.

The electrical characteristics of 2SK3316 can be summerized as:(1): gate leakage current, IGSS is ±10 A max when VGS is ±25 V and VDS is 0 V; (2): drain-source breakdown voltage, V(BR)DSS is 500 V min when IG is 10 mA and VGS is 0 V; (3): drain cut-off current, IDSS is 100 uA max when VDS is 500 A and VGS is 0 V; (4): input capacitance, Ciss is 780 pF typ when VDS is 10 V , VGS is 0 V and f is 1 MHz; (5): gate threshold voltage, Vth is 2.0 V min and 4.0 V max when VDS is 10 V and ID is 1 mA; (6): drain-source ON resistance, RDS(ON) is 1.6 ohm typ and 1.8 ohm max when VGS is 10 V and ID is 2.5 A.