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2SK3322

Features: • Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A)• Gate voltage rating : ±30 V• Low on-state resistance : RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.8 A)• Avalanche capability ratings• Surface mount package availableSpecifications D...

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SeekIC No. : 004226646 Detail

2SK3322: Features: • Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A)• Gate voltage rating : ±30 V• Low on-state resistance : RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2....

2SK3322 Data Sheet

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Part Number:
2SK3322
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low gate charge :
  QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
   RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.8 A)
• Avalanche capability ratings
• Surface mount package available


Specifications

Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±5.5
A
Drain Current (pulse) Note1
ID(pulse)
±20
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
65
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Single Avalanche Current Note2
IAS
4.0
A
Single Avalanche Energy Note2
EAS
10.7
mJ


Notes 1. PW 10 s, Duty Cycle 1%
          2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V




Description

The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.




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