Features: · Low on-resistanceRDS =1.26 W typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 W typ. (VGS = 4 V , ID = 50 mA)· 4 V gate drive device.Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain cur...
2SK3380: Features: · Low on-resistanceRDS =1.26 W typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 W typ. (VGS = 4 V , ID = 50 mA)· 4 V gate drive device.Specifications Item Symbol Ratings Unit D...
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|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
30 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
300 |
mA |
| Drain current peak |
ID (pulse) Note1 |
1.2 |
A |
| Body-drain diode reverse drain current |
IDR |
300 |
mA |
| Channel dissipation |
Pch |
300 |
mW |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
55 to +150 |
°C |