2SK3458

Features: • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)• Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A)• Avalanche capability ratings• Surface mount package availableSpecifications PARAM...

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SeekIC No. : 004226703 Detail

2SK3458: Features: • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)• Gate voltage rating ±30 V• Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A)&#...

floor Price/Ceiling Price

Part Number:
2SK3458
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Description



Features:

• Low gate charge
   QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
   RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
• Surface mount package available



Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
800
V
Gate to source voltage(VDS = 0 V)
VGSS
±30
V
Drain current(DC)(TC = 25°C)
ID(DC)
±6.0
A
Drain peak current(Pulse)1
ID(pulse)
±24
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
100
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Single Avalanche Current 2
IAS
6.0
A
Single Avalanche Energy 2
EAS
66.5
mJ
Notes 1. PW 10 s, Duty Cycle 1%
          2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0V



Description

The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power supply.




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