Purchase 2SK3513-01SJ, In-stock 2SK3513-01SJ From SeekIC.
- Table of contents:
2SK3513-01SJ
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Suppliers
DataSheet
General Description
2SK3513-01SJ Maximum Ratings
| Item |
Symbol |
Ratings |
Unit | |
| Drain-source voltage |
VDS
|
600
|
V
| |
| Continuous drain current |
ID |
±12 |
A | |
| Pulsed drain current |
D(puls] |
±48 |
A | |
| Gate-source voltage |
VGS |
±30 |
V | |
| Repetitive or non-repetitive |
IAR *2 |
12 |
A | |
| Maximum Avalanche Energy |
EAS *1 |
183 |
mJ | |
| Maximum Drain-Source dV/dt |
dVDS/dt *4 |
20 |
kV/s | |
| Peak Diode Recovery dV/dt |
dV/dt *3 |
5 |
kV/s | |
| Max. power dissipation |
PD
|
Ta=25°C |
1.67 |
W |
| Tc=25°C |
195 | |||
| Operating and storage |
Tch |
+150 |
°C | |
| temperature range |
Tstg |
-55 to +150 |
°C | |
*1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph
*2 Tch 150°C
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
*4 VDS 600V
2SK3513-01SJ Features
·High speed switching
·Low on-resistance
·No secondary breadown
·Low driving power
·Avalanche-proof
2SK3513-01SJ Typical Application
·Switching regulators
·UPS (Uninterruptible Power Supply)
·DC-DC converters
2SK3513-01SJ
PDF/DataSheet Download
- Datasheet: 2SK3513-01SJ
- File Size: 100220 KB
- Manufacturer: FUJI
- Click here to Download
- ·2SK0065
- PANASONIC [Panasonic Semiconductor]
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- PANASONIC [Panasonic Semiconductor]
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- 75927 KB
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2SK3513-01SJ Relative Products
2SK3513-01S
2SK3513-01L
2SK3512-01SJ
2SK3512-01S
2SK3512-01L
2SK3511
The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications.
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