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2SK3562

Application• Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)• High forward transfer admittance: |Yfs| = 5.0S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol ...

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2SK3562: Application• Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)• High forward transfer admittance: |Yfs| = 5.0S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)• En...

2SK3562 Data Sheet

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Part Number:
2SK3562
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Application

• Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)
• High forward transfer admittance: |Yfs| = 5.0S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS 600 V
Drain-gate voltage (RGS = 20 k VDGR 600 V
Gate-source voltage VGSS ±30 V
Drain current DC (Note 1) ID 6 A
Pulse (t = 1 ms)
(Note 1)		 IDP 24
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy (Note 2) EAS 345 mJ
Avalanche current IAR 6 A
Repetitive avalanche energy (Note 3) EAR 4 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C



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