2SK3566

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 12nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 2.5A
Power - Max: 40W
Drain to Source Voltage (Vdss): 900V
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 470pF @ 25V
Supplier Device Package: TO-220SIS
Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 1.5A, 10V


Application

• Low drain-source ON resistance: R _{DS (ON)} = 5.6 (typ.)
• High forward transfer admittance: |Yfs| = 2.0 S (typ.)
• Low leakage current: I_DSS = 100 A (V_DS = 720 V)
• Enhancement-mode: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)


Specifications

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-source voltage		VDSS	900	V
Drain-gate voltage (RGS = 20 k)		VDGR	900	V
Gate-source voltage		VGSS	±30	V
Drain current	DC (Note 1)	ID	2.5	A
	Pulse (t = 1 ms) (Note 1)	IDP	7.5
Drain power dissipation (Tc = 25°C)		PD	40	W
Single pulse avalanche energy (Note 2)		EAS	216
Avalanche current		lAR	2.5
Repetitive avalanche energy (Note 3)		EAR	4	MJ
Channel temperature		Tch	150	°C
Storage temperature range		Tstg	-55~150	°C

Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C, L = 63.4 mH, I_AR = 2.5 A, R_G = 25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.