2SK3642 Selling Leads, Price trend, 2SK3642 DataSheet download, circuit diagram from SeekIC.com

Features: • Low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 16 m MAX. (VGS = 4.5 V, ID = 18 A)• Low Ciss: Ciss = 1100 pF TYP.• Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT Drain to source voltage (VG...

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SeekIC No. : 004226807 Detail

2SK3642: Features: • Low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 16 m MAX. (VGS = 4.5 V, ID = 18 A)• Low Ciss: Ciss = 1100 pF TYP.• Built-in gate protec...

2SK3642 Data Sheet

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Part Number:: 2SK3642
Supply Ability:: 5000

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Product Details

Description

Features:

• Low on-state resistance
   R_DS(on)1 = 9.5 m MAX. (V_GS= 10 V, I_D = 32 A)
   R_DS(on)2 = 16 m MAX. (V_GS = 4.5 V, I_D = 18 A)
• Low C_iss:    C_iss = 1100 pF TYP.
• Built-in gate protection diode

Specifications

PARAMETER	SYMBOL	RATING	UNIT
Drain to source voltage (V_GS = 0 V)	V_DSS	30	V
Gate to source voltage(V_DS = 0 V)	V_GSS	±20	V
Drain current(DC)(T_C= 25°C)	I_D(DC)	±64	A
Drain peak current(Pulse)¹	I_D(pulse)	±190	A
Total Power Dissipation (T_C= 25°C)	P_T1	36	W
Total Power Dissipation	P_T2	1.0	W
Channel temperature	T_ch	150
Storage temperature	T_stg	-55to+150
Single Avalanche Current ²	I_AS	25	A
Single Avalanche Energy ²	E_AS	62	mJ

Notes 1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25°C, V_DD = 15 V, R_G = 25 , L = 100 H, V_GS = 20 0 V

Description

The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

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2SK3642

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